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| to ? 92 1. emitter 2. collector 3. base to-92 plastic-encapsulate transistors 2SB561 transistor (pnp) features z low frequency power amplifier maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =- 0.01ma,i e =0 -25 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,i b =0 -20 v emitter-base breakdown voltage v (br)ebo i e =-0.01ma,i c =0 -5 v collector cut-off current i cbo v cb =-20v,i e =0 -1 a emitter cut-off current i ebo v eb =-5v,i c =0 -1 a dc current gain h fe * v ce =-1v, i c =-0.15a 85 240 collector-emitter saturation voltage v ce(sat) i c =-0.5a,i b =-0.05a -0.5 v base-emitter voltage v be v ce =-1v, i c =-0.15a -1 v collector output capacitance c ob v cb =-10v,i e =0, f=1mhz 20 pf transition frequency f t v ce =-1v, i c =-0.15a 350 mhz *pulse test classification of h fe rank b c range 85-170 120-240 symbol parameter value unit v cbo collector-base voltage -25 v v ceo collector-emitter voltage -20 v v ebo emitter-base voltage -5 v i c collector current -700 ma p c collector power dissipation 500 mw r ja thermal resistance from junction to ambient 250 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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